Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1999-02-12
2000-06-06
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438737, 438740, 438743, H01L 2100
Patent
active
060718269
ABSTRACT:
A method for forming a CMOS image sensor spacer structure. A polysilicon gate electrode is formed on a substrate; a thin layer of first dielectric is deposited over the exposed surfaces of the gate electrode and the top of the substrate. Next a second layer of dielectric is deposited after which etching is performed to create the electrode spacer. The deposited second layer of dielectric serves as an etch stop and prevents damage to the substrate surface between spacers of the gate electrodes. An alternate method uses a thin ply layer as the stop layer and, in so doing, source/drain damage caused by the white pixel problem.
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Chen Sen-Fu
Chien Wen-Cheng
Cho Ching-Wen
Chu Hui-Chen
Lo Chi-Hsin
Ackerman Stephen B.
Powell William
Saile George O.
Taiwan Semiconductor Manufacturing Company
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