Method of manufacturing CMOS image sensor

Details Method of manufacturing CMOS image sensor Method of manufacturing CMOS image sensor

2006-12-27

2009-12-01

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S090000, C438S302000, C438S305000, C438S525000, C438S529000, C257SE27133

Reexamination Certificate

active

07625774

ABSTRACT:
Embodiments relate to a method of manufacturing a CMOS image sensor in which, when a buried photodiode is formed, a p-type impurity region may be formed simultaneously with a p-type LDD region in the photo diode region. Additionally, a p-type impurity region may be formed under side wall spacers, which may reduce leakage current of the photodiode. In embodiments, the method may include providing a semiconductor substrate divided into a pMOS region, a nMOS region, and a diode region, forming a shallow trench isolation (STI) on the semiconductor substrate, opening only the nMOS region and implanting low density n-type impurities to form an n-type LDD region, opening the diode region and pMOS region and implanting impurities to form a p-type impurity region and a p-type LDD region, opening only the diode region and implanting impurities to form an n-type impurity region, forming side wall spacers on both side walls of the gate, opening only the nMOS region and implanting high density n-type impurities to form an n-type source and drain region, and opening only the pMOS region and implanting high density p-type impurities to form p-type source and drain region.

REFERENCES:
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