Method of manufacturing CMOS image sensor

Details Method of manufacturing CMOS image sensor Method of manufacturing CMOS image sensor

2006-06-27

2008-08-19

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S069000, C438S071000, C438S072000, C257S431000, C257S432000, C257S440000, C257S443000, C257S444000

Reexamination Certificate

active

07413923

ABSTRACT:
Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is performed using a first mask to form a microlens pattern corresponding to photodiodes on a semiconductor substrate. The microlens pattern is reflowed to form dome-shaped microlenses. A second photoresist is applied on the resulting substrate, and patterning of the second photoresist is preformed using a second mask to retain the second photoresist on top portions of the microlenses. Edge portions of the microlenses are selectively removed using the patterned second photoresist as a mask to make CD (critical dimension) spaces between the microlenses uniform.

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