Method of manufacturing charge transfer device

Details Method of manufacturing charge transfer device Method of manufacturing charge transfer device

1993-02-17

1995-03-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, H01L 21265, H01L 2170, H01L 2700

Patent

active

054016797

ABSTRACT:
To manufacture a charge transfer device, a first insulating film is deposited on a surface of a semiconductor substrate as a charge transfer region for transferring charge packets therein in one direction. Then, a plurality of first transfer electrodes are deposited on the first insulating film, the first transfer electrodes being spaced from each other, and a portion of each of the first transfer electrodes is removed to shape each of the first transfer electrodes into a staircase configuration. Thereafter, a first impurity is ion-implanted into the surface of the semiconductor substrate to create an impurity-diffused region therein which includes first and second different-potential subregions underneath each of the first transfer electrodes and a different-potential subregion underneath each of areas of the first insulating film between the first transfer electrodes. After the first impurity is ion-implanted, a mask is deposited on portions of the areas of the first insulating film and on side portions of the first transfer electrodes, and a second impurity is ion-implanted into the surface of the semiconductor substrate to divide the different-potential subregion underneath each of the areas into third and fourth different-potential subregions.

REFERENCES:
patent: 4087832 (1978-05-01), Jambotkar
patent: 4613402 (1986-09-01), Losee et al.
patent: 4814844 (1989-03-01), Bluzer
patent: 5065203 (1991-11-01), Yang et al.
patent: 5238863 (1993-08-01), Fukusho et al.
patent: 5292682 (1994-03-01), Stevens et al.
patent: 5298448 (1994-03-01), Stevens et al.

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