Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-03-06
2007-03-06
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C117S006000, C117S007000, C257SE21002
Reexamination Certificate
active
10722422
ABSTRACT:
A lower electrode is formed over a substrate, and a raw material including a complex oxide is heated in an atmosphere pressurized to two atmospheres or more and containing oxygen at a volume ratio of 10% or less at a temperature raising rate of 100° C./min or less, thereby forming a lower alloy film of a compound of a first metal which makes up the complex oxide, and a second metal, which makes up the lower electrode, over the lower electrode. A ceramic film in which the raw material is crystallized is formed over the lower alloy film, and an upper electrode is formed over the ceramic film.
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Kijima Takeshi
Natori Eiji
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