Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1979-12-03
1981-12-15
McQuade, John
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01J 902
Patent
active
043051880
ABSTRACT:
A method of manufacturing a cathode assembly for use with an electron tube in which the cathode assembly is comprised of a metal cap composed principally of nickel Ni and welded to a cathode sleeve composed principally of nickel Ni, an electron emissive coating layer formed on a surface of the base metal, and a supporting member welded to the cathode sleeve. The method comprises the step of treating or conducting at least the metal cap under a solution heat treatment.
REFERENCES:
patent: 2720458 (1955-10-01), Kates
patent: 2945295 (1960-07-01), Feaster
patent: 3823453 (1974-07-01), Van Stratum et al.
patent: 3919751 (1975-11-01), Buescher et al.
patent: 4079164 (1978-03-01), Misumi
patent: 4114243 (1978-09-01), Soend et al.
McQuade John
Sony Corporation
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