Method of manufacturing carrier wafer and resulting carrier...

Details Method of manufacturing carrier wafer and resulting carrier... Method of manufacturing carrier wafer and resulting carrier...

2008-07-01

2008-07-01

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C438S745000, C216S084000, C216S088000, C216S089000

Reexamination Certificate

active

07393790

ABSTRACT:
A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a predetermined tolerance of one another, reducing the thickness of the sorted carrier wafers to within 10 microns of a final target thickness, and polishing the sorted carrier wafers to the final target thickness. The polished carrier wafers are mounted to device precursor wafers having at least one semiconductor epitaxial layer on a substrate by joining one surface of a carrier wafer to the epitaxial layer on a substrate. The thickness of the device precursor wafer is then reduced by removing material from the device precursor substrate opposite the joined epitaxial layer.

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Search Report for ROC (Taiwan) Patent Application No. 094131347; Search Completion Date: Apr. 26, 2007; 1 page.

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