Method of manufacturing capacitors integrated in microelectronic

Details Method of manufacturing capacitors integrated in microelectronic Method of manufacturing capacitors integrated in microelectronic

1983-07-05

1984-05-22

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 42, C25D 1104, C25D 1112

Patent

active

044500483

ABSTRACT:
A method of manufacturing MOM capacitors, the dielectric and the lateral insulation of which are formed by islands and by vertical partition walls, respectively, obtained by local anodic oxidation of one of the plates of said capacitors. The islands and the vertical partition walls are formed from cavities provided in the plates of the said capacitors.

REFERENCES:
patent: 3461347 (1969-08-01), Temelson
patent: 3785937 (1974-01-01), McMahon
patent: 3864217 (1975-02-01), Takahata
patent: 4157610 (1979-06-01), Kamei

Affiliated with

Also associated with

Rating

Method of manufacturing capacitors integrated in microelectronic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing capacitors integrated in microelectronic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing capacitors integrated in microelectronic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1477371