Method of manufacturing capacitor elements in an integrated circ

Details Method of manufacturing capacitor elements in an integrated circ Method of manufacturing capacitor elements in an integrated circ

1992-06-19

1993-07-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170

Patent

active

052273237

ABSTRACT:
A capacitor element is formed in an integrated circuit having a compound semiconductor substrate such as a GaAs substrate and having Schottky type FETs formed on the substrate, with the capacitor element being formed by a process in which a lower electrode of a capacitor element and a lower layer portion of the gate electrode of a FET are formed by the same processing step from a high melting-point tungsten compound, a film of insulating material having a high dielectric coefficient is formed overall and is patterned to expose the gate electrode lower layer, and a high-conductance metallic film is then deposited overall and patterned to form an upper electrode of the capacitor element and an upper layer portion of the gate electrode. Capacitor elements and FETs can thereby be formed in such an IC by a simple process, while substantial reduction of the substrate area occupied by each capacitor element can be achieved.

REFERENCES:
patent: 4937650 (1990-06-01), Shinriki et al.
patent: 5108941 (1992-04-01), Paterson et al.

Affiliated with

Also associated with

Rating

Method of manufacturing capacitor elements in an integrated circ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing capacitor elements in an integrated circ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing capacitor elements in an integrated circ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2311594