Method of manufacturing buried heterostructure semiconductor las

Details Method of manufacturing buried heterostructure semiconductor las Method of manufacturing buried heterostructure semiconductor las

1993-10-07

1995-11-28

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437133, 437107, H01L 2120, H01L 21203

Patent

active

054707854

ABSTRACT:
According to a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor substrate are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.

REFERENCES:
Kawabata et al. in J. Appl. Phys. vol. 64(7), Oct. 1988, pp. 3684-3688.
Nelson et al. in Electronic letters vol. 21(20), Sep. 1985, pp. 888-889.

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