Method of manufacturing bipolar transistor with self-aligned bas

Details Method of manufacturing bipolar transistor with self-aligned bas Method of manufacturing bipolar transistor with self-aligned bas

1991-02-07

1993-05-25

Chaudhuri, O.

Fishing, trapping, and vermin destroying

437154, 437940, 148DIG78, H01L 21265, H01L 2970

Patent

active

052139883

ABSTRACT:
To manufacture a semiconductor device, a buried layer, epitaxial layer and an element separating layer are formed on a substrate, in order; a first resist film is formed thereon and an opening at which a first base is to be formed in patterned in the epitaxial layer; a first base is formed by ion-injection with the first resist film as a mask; the first resist film is removed and an interlayer insulating film is formed; a second resist film is formed thereon and an opening at which a second base is to be formed is removed by etching; the bottom surface of the opening portion is oxidized to form a second base under the same opening due to reduction of impurity concentration; the oxide film is removed and a polysilicon film is formed; an emitter electrode is patterned; and an emitter layer is formed on the second base by ion injection and thermal diffusion. Since the first and second base can be formed in self-alignment condition, the element can be minimized without providing a mask matching margin. Further, when a second interlayer insulating film is formed between the first base and the emitter layer as a sidewall spacer, the distance between the two can be precisely controlled by changing the film thickness of the second interlayer film, thus realizing a microstructure semiconductor device.

REFERENCES:
patent: 3418186 (1968-12-01), Ku
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4581319 (1986-04-01), Wieder et al.

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