Method of manufacturing bipolar transistor by implanting intrins

Details Method of manufacturing bipolar transistor by implanting intrins Method of manufacturing bipolar transistor by implanting intrins

1990-11-19

1992-06-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437933, 437950, H01L 21265, H01L 2970

Patent

active

051262789

ABSTRACT:
A method of manufacturing a bipolar transistor, and more particularly to a method of manufacturing a bipolar transistor with reduced base width W.sub.B by implanting intrinsic impurities such as Ge and Sn in the base region.

REFERENCES:
patent: 4589936 (1986-05-01), Komatsu
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4746964 (1988-05-01), Aronowitz

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