Method of manufacturing bipolar transistor

Details Method of manufacturing bipolar transistor Method of manufacturing bipolar transistor

1989-06-26

1990-12-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 64, 437 72, 437193, 437909, 437 67, 148DIG11, H01L 21331

Patent

active

049803050

ABSTRACT:
A bipolar transistor in which a base region and a collector lead-out portion is separated is disclosed. The base region and an active collector portion under the base region is surrounded by a narrow trench filling an insulating film, and the trench is in turn surrounded by the collector lead-out portion. A collector electrode is contacted to the upper surface of the collector lead-out portion such that the collector contact surrounds the active collector portion via the trench, in the plan view.

REFERENCES:
patent: 4460417 (1984-07-01), Murase et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4507171 (1985-03-01), Bhatia et al.
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4745087 (1988-05-01), Iranmanesh
patent: 4746629 (1988-05-01), Hanagasaki
patent: 4780427 (1988-10-01), Sakai et al.

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