Method of manufacturing bipolar transistor

Details Method of manufacturing bipolar transistor Method of manufacturing bipolar transistor

1986-11-12

1988-04-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437153, 437162, 357 34, H01L 2972

Patent

active

047404825

ABSTRACT:
A method of manufacturing a semiconductor device in which in order to lead out directly a base electrode (9) from an active base layer (62) through a double layer comprising a first silicon film (601) and a metal silicide film (502), a part of an emitter electrode is formed of a second silicon film (602) and a hole for a contact is provided for forming the metal silicide film (502) for the active base layer (62) utilizing the second silicon film (602) as a mask.

REFERENCES:
"A 2.1-GHz 56-mW Two-Modulus Prescaler IC Using Salicide Base Contact Technology", T. Hirao et al, Extended Abstracts of the 17th Conference on Solid State Devices and Materials, Tokyo, 1985, pp. 381-384.

Affiliated with

Also associated with

Rating

Method of manufacturing bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-819502