Method of manufacturing bipolar semiconductor device

Details Method of manufacturing bipolar semiconductor device Method of manufacturing bipolar semiconductor device

1987-07-07

1988-11-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437228, 437186, 437200, 148DIG10, 148DIG11, 357 34, 357 59, 156653, H01L 21306

Patent

active

047820306

ABSTRACT:
A laminated film made of a first insulating film and a second insulating film having a selectivity of etching condition to the first insulating film is selectively formed on a first conductivity type semiconductor substrate to use the substrate under the laminated film as a base and emitter active region forming region. The laminated film remains until an anisotropically dry etching step is finished to prevent the base and emitter active region from damaging due to an etching atmosphere at anisotropically dry etching time.

REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4309812 (1982-01-01), Horng et al.
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4481706 (1984-11-01), Roche
patent: 4590666 (1986-05-01), Gato
patent: 4693782 (1987-09-01), Kikuchi et al.
Ghandhi, "VLSI Fabrication Principles" 1983, pp. 352-355.
Chai, A New Self Aligned . . . " IEDM Tech. Dig. 1985, pp. 26-29.

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