Method of manufacturing BICMOS integrated circuits

Fishing – trapping – and vermin destroying

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437 57, 148DIG9, H01L 218249

Patent

active

056912269

ABSTRACT:
A method of manufacturing both bipolar and CMOS devices including vertical PNP, NPN, PMOS and NMOS devices on the same chip, includes the steps of, simultaneously forming an N+ region (14) on part of a P base region (11) of the vertical NPN device to form the emitter contact region thereof, an N+ region (14) on a part of an N- epitaxial layer (5) of the vertical NPN device to form the collector contact region thereof, N+ regions (14) on first and second parts of a P well region (8) of the NMOS device to form the source and drain thereof, and an N+ region (14) on an N base region (9) of the vertical PNP device to form the base contact thereof. In a further simultaneous step, there are formed P+ regions (15) on the P-well (8) and N base (9) regions of the vertical PNP device to form the collector and emitter contact regions thereof, P+ regions (15) on first and second parts of the N- epitaxial layer (5) of the PMOS device to form the source and drain thereof, and a P+ region (15) on part of the P base region (11) of the vertical NPN device to form the base contact region thereof.

REFERENCES:
patent: 5001073 (1991-03-01), Huie
patent: 5011784 (1991-04-01), Ratnakumar
patent: 5091321 (1992-02-01), Huie et al.
patent: 5179036 (1993-01-01), Matsumoto
patent: 5192992 (1993-03-01), Kim et al.
patent: 5245209 (1993-09-01), Ishigaki
patent: 5406106 (1995-04-01), Hirai et al.

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