Method of manufacturing .beta.'SiAlON compounds

Details Method of manufacturing .beta.'SiAlON compounds Method of manufacturing .beta.'SiAlON compounds

1977-09-27

1979-04-03

Meros, Edward J.

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

106 65, 106 734, 264 65, C01B 2100, C01B 3326

Patent

active

041477596

ABSTRACT:
Method of manufacturing silicon nitrides with a general formula of Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, in which z is a number less than or equal to 2.8. Silicon nitride is made to react at a temperature higher than 1600.degree. C. and in the finely divided state on aluminium oxynitride, and in the presence of an agent which generates gaseous silicon monoxide. Application to the manufacture of hard materials of high resistance to oxidation and to creep at high temperature.

REFERENCES:
patent: 3903230 (1975-09-01), Kamigaito et al.
patent: 3991148 (1976-11-01), Lumby et al.
Oyama, Japan J. Appl. Phys. 11 (1972) pp. 760-761.
Jack et al "Nature Physical Science" vol. 238, Jul. 10, 1972, pp. 28-29.

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