Method of manufacturing avalanche photo diode

Details Method of manufacturing avalanche photo diode Method of manufacturing avalanche photo diode

1987-04-30

1988-08-02

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

357 13, 357 30, 437 5, H01L 3118

Patent

active

047613831

ABSTRACT:
An avalanche photo diode in which the guard ring portion and the front of the pn junction of the light receiving portion are formed at the same depth from the surface of an InP layer, so that the guard ring performs its desired function.

REFERENCES:
patent: 4125415 (1978-11-01), Clark
patent: 4153904 (1979-05-01), Tasch et al.
patent: 4481523 (1984-11-01), Osaka et al.
patent: 4651187 (1987-03-01), Sugimoto et al.
Nishida et al, "InGaAsP Heterostructure . . . Gain", Appl. Phys. Lettr., 35(3), Aug. 1, 79, pp. 251-253.
Shirai et al, "1.3 .mu.m InP/InGaAsP . . . Photodiodes", Elect. Lettr. Oct. 29, 1981, vol. 17, No. 22, pp. 826-827.
Teguchi et al, "InP-InGaAsP . . . Effect", Elect. Lettr., Jul. 19, 1979, vol. 15, No. 15, pp. 453-455.

Affiliated with

Also associated with

Rating

Method of manufacturing avalanche photo diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing avalanche photo diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing avalanche photo diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-711752