Method of manufacturing an SRAM load shield

Details Method of manufacturing an SRAM load shield Method of manufacturing an SRAM load shield

1996-10-22

1997-12-23

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437918, 148DIG136, H01L 2170

Patent

active

057007110

ABSTRACT:
A shield structure is formed over each of the undoped or lightly doped polysilicon load devices of a 4T SRAM cell. The shield structure may be a metal such as aluminum, titanium or tungsten and serves to protect the undoped or lightly doped resistor within a polysilicon load device from charge-induced damage during ion implantation or plasma processing steps performed on the SRAM after formation of the polysilicon load device. The polysilicon load device is defined by depositing a layer of photoresist, exposing the photoresist through a master load mask, etching, and implanting into the exposed polysilicon. After the load device is formed, a dielectric layer is deposited and then a layer of conductive material is deposited. Dummy conductor structures are formed from the layer of conductive material using photolithography and the master load mask.

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patent: 5204279 (1993-04-01), Chan et al.
patent: 5470779 (1995-11-01), Yoo
patent: 5635418 (1997-06-01), Roberts

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