Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-03-06
2007-03-06
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C257SE21122
Reexamination Certificate
active
10500381
ABSTRACT:
When an SOI wafer is produced by using a bond wafer made of silicon single crystal to form an SOI layer and a base wafer made of silicon single crystal to be a support substrate, one silicon wafer selected from a group consisting of an epitaxial wafer, an FZ wafer, a nitrogen doped wafer, a hydrogen annealed wafer, an intrinsic gettering wafer, a nitrogen doped and annealed wafer, and an entire N-region wafer is used as the bond wafer. Thereby, even where a thin insulator film or a thin SOI layer is formed in the SOI wafer, COPs are hardly detected in inspection of the SOI layer after the SOI wafer was completed, and a high quality SOI wafer is provided.
REFERENCES:
patent: 6362076 (2002-03-01), Inazuki et al.
patent: 6461939 (2002-10-01), Furihata et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6544656 (2003-04-01), Abe et al.
patent: 6544862 (2003-04-01), Bryan
patent: 6596610 (2003-07-01), Kuwabara et al.
patent: 6846718 (2005-01-01), Aga et al.
patent: 6867110 (2005-03-01), Yanagita et al.
patent: 6959854 (2005-11-01), Yokokawa et al.
patent: 2001/0038153 (2001-11-01), Sakaguchi
patent: 0 843 344 (1998-05-01), None
patent: A 5-211128 (1993-08-01), None
patent: A 9-64319 (1997-03-01), None
patent: 10-200080 (1998-07-01), None
patent: A 11-40786 (1999-02-01), None
patent: A 11-145436 (1999-05-01), None
patent: A 11-297583 (1999-10-01), None
patent: A 2000-58801 (2000-02-01), None
patent: A 2000-178099 (2000-06-01), None
patent: 2001-144275 (2001-05-01), None
patent: A 2002-110684 (2002-04-01), None
patent: A 2002-176155 (2002-06-01), None
patent: WO 99/39380 (1999-08-01), None
patent: WO 01/17024 (2001-03-01), None
Isaac Stanetta
Lebentritt Michael
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method of manufacturing an SOI wafer where COP's are... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an SOI wafer where COP's are..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an SOI wafer where COP's are... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3729667