Method of manufacturing an optoelectronic semiconductor device,

Details Method of manufacturing an optoelectronic semiconductor device, Method of manufacturing an optoelectronic semiconductor device,

1996-04-18

1998-06-02

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

438 38, 438 44, 438 47, H01S 319, H01L 2300

Patent

active

057598720

ABSTRACT:
A passive region is provided adjacent the mirror surface of a laser. A mesa is formed with an end face parallel to the mirror surface to be formed. The passive region is grown against the end face, and the mirror surface is formed therein by cleaving. The passive region is provided exclusively at the area of the active region. The passive region is provided at the area of the active region preferably in the following manner: two depressions are formed in the layer structure of the laser at the area of the mirror surface to be formed, reaching down to the active layer. Then a portion of the active layer situated between the depressions is selectively removed, whereupon the passive region is grown starting from the depressions in the tubular cavity thus formed.

REFERENCES:
patent: 5063173 (1991-11-01), Gasser et al.
patent: 5177031 (1993-01-01), Buchmann et al.
patent: 5550081 (1996-08-01), Holonyak, Jr. et al.

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