Fishing – trapping – and vermin destroying
Patent
1991-09-30
1996-04-09
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
H01L 21223
Patent
active
055061869
ABSTRACT:
The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improve the contact resistance, after the zinc diffusion and before the application of contacts, a heat treatment of the semiconductor body is carried out in the absence of a zinc source.
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Matsumoto, Y., Diffusion of Cd and Zn in InP and InGaAsP, Japanese Journal of Applied Physics, vol. 22, No. 11, Nov. 1983, pp. 1699-1704.
Yamada, M., Double zinc diffusion fronts in InP-Theory and Experiment, Appl. Phys. Lett. 43(6), 15 Sep. 1983, pp. 594-596.
Ando, H., Low-temp. Zn and Cd diffusion Profiles in InP and Formation of Guard Ring in InP. IEEE Trans. on Elect. Devices, vol. ED-29, Avalanche Photodiodes, No. 9, Sep. 1982, pp. 1408-1413.
Balconi-Lamica Michael J.
Breneman R. Bruce
Miller Paul R.
U.S. Philips Corporation
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