Method of manufacturing an optical semiconductor element

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S040000

Reexamination Certificate

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07541204

ABSTRACT:
A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAlP layer around the protruding body using a solution containing hydrofluoric acid.

REFERENCES:
patent: 6876688 (2005-04-01), Hayakawa et al.
patent: 2005/0035355 (2005-02-01), Konno et al.
patent: 2003-332691 (2003-11-01), None

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