Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-09-05
2009-06-02
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S040000
Reexamination Certificate
active
07541204
ABSTRACT:
A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAlP layer around the protruding body using a solution containing hydrofluoric acid.
REFERENCES:
patent: 6876688 (2005-04-01), Hayakawa et al.
patent: 2005/0035355 (2005-02-01), Konno et al.
patent: 2003-332691 (2003-11-01), None
Hayamizu Naoya
Iino Daiki
Shimmura Tadashi
Kabushiki Kaisha Toshiba
Nguyen Tuan H
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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