Method of manufacturing an MOS capacitor

Details Method of manufacturing an MOS capacitor Method of manufacturing an MOS capacitor

1986-05-23

1988-04-05

Beck, Shrive P.

Coating processes

Electrical product produced

Condenser or capacitor

427 80, B05D 512

Patent

active

047358246

ABSTRACT:
A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.

REFERENCES:
patent: 3947299 (1976-03-01), Weijland
patent: 4139785 (1979-02-01), McElroy
patent: 4234362 (1980-11-01), Riseman
patent: 4621277 (1986-11-01), Ito
patent: 4645564 (1987-02-01), Moire
S. A. Abbas, "Silicon on Polysilicon with Deep Dielectric Isolation", IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2754-2755.
B. E. Deal, D. W. Hess, J. D. Plummer, C. P. Ho, "Kinetics of the Thermal Oxidation of Silicon in O.sub.2 /H.sub.2 O and O.sub.2 /Cl.sub.2 Mixtures", J. Electrochem. Soc., vol. 125, No. 2, Feb. 1978, pp. 339-346.
IEEE Transactions on Electron Devices, vol. ED-32, No. 2: H. Sunami et al, "Scaling Considerations and Dielectric Breakdown Improvement of a Corrugated Capacitor Cell for a Furture dRAM", pp. 296-303, 1985.

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