Method of manufacturing an MIS type semiconductor device

Details Method of manufacturing an MIS type semiconductor device Method of manufacturing an MIS type semiconductor device

1983-06-20

1985-03-05

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 357 91, H01L 21265

Patent

active

045022054

ABSTRACT:
A method of forming an impurity region for an MIS type semiconductor device includes the step of activating an implanted impurity with an energy beam anneal, said implantation comprising multiple impurity ion implantation steps with varied implantation energies. The implantation energy and dosage are selected to provide a total peak concentration of implantation profile which does not exceed the electrically active solubility. The energy beam anneal is performed in such a way that the implanted impurity is substantially activated without redistribution. An impurity region with low sheet resistance is obtained, lateral diffusion of the impurity is suppressed, and the leakage current is kept low.

REFERENCES:
patent: 4116717 (1978-09-01), Rahilly
patent: 4331485 (1982-05-01), Gat
P. Siffert, in Proceedings, 4th European Community Photovoltaic Solar Energy Conf., Stresa, Italy, May 1982, Reidel Pub. Co., pp. 901-918.

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