Method of manufacturing an MIS-type semiconductor device

Details Method of manufacturing an MIS-type semiconductor device Method of manufacturing an MIS-type semiconductor device

1992-11-02

1994-08-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, 437236, 437237, 437241, 437242, 134 1, 117108, 117952, H01L 2102

Patent

active

053363612

ABSTRACT:
Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface of a GaAs substrate is treated with a plasma generated from a gas containing hydrogen and nitrogen or from a gas containing hydrogen and argon, so as to reduce the interface state density. An ECR plasma is used as the plasma, so that the damage caused by the plasma to the GaAs substrate is alleviated. After the surface treatment process, an healing process is performed, which sufficiently removes the damage. During the surface treatment process using the plasma generated from the gas containing hydrogen and nitrogen, a GaN gate insulating film is formed on the surface of the GaAs substrate. The surface treatment process using the plasma generated from the gas containing hydrogen and argon is followed by the process of forming a gate insulating film on the GaAs substrate; the two processes are successively performed within the same apparatus without exposing the GaAs substrate to ambient air.

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