Method of manufacturing an LED

Details Method of manufacturing an LED Method of manufacturing an LED

2008-01-14

2009-08-04

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making conductivity modulation device

C438S091000, C438S602000, C257SE21053, C257SE21126, C257SE21127, C257SE21352

Reexamination Certificate

active

07569432

ABSTRACT:
A method of manufacturing an LED of high reflectivity includes forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the n-type GaN layer; depositing a p-type GaN layer on the active layer; forming a metal reflector on the p-type GaN layer; attaching a p-type metal electrode to the metal reflector; and attaching the p-type metal electrode and the n-type metal electrode to an epitaxial layer respectively. The metal reflector includes a transparent layer, an Ag layer, and an Au layer. The transparent layer and the Ag layer are formed by annealing in a furnace, and the Au layer is subsequently coated on the Ag layer.

REFERENCES:
patent: 6900472 (2005-05-01), Kondoh et al.
patent: 7279347 (2007-10-01), Hon et al.
patent: 7358539 (2008-04-01), Venugopalan et al.
patent: 2002/0117672 (2002-08-01), Chu et al.
patent: 2008/0265265 (2008-10-01), Xiong et al.

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