Method of manufacturing an integrated circuit utilizing outdiffu

Details Method of manufacturing an integrated circuit utilizing outdiffu Method of manufacturing an integrated circuit utilizing outdiffu

1974-12-19

1976-11-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29577, 148190, 148191, 357 40, 357 44, 357 48, 357 63, H01L 2122, H01L 2176

Patent

active

039935124

ABSTRACT:
Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.

REFERENCES:
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patent: 3387193 (1968-06-01), Donald
patent: 3551221 (1970-12-01), Yanagawa
patent: 3566218 (1971-02-01), Widlar et al.
patent: 3582725 (1961-06-01), Matukura
patent: 3748545 (1973-07-01), Beale
patent: 3801836 (1974-04-01), Castrucci et al.
chang et al., "Fabrication of PNP and NPN - - - Single Wafer or Chip" I.B.M. Tech. Discl. Bull., vol. 11, No. 12, May 1969, pp. 1653-1654.
Chang et al., "Complementary NPN and PNP - - - Circuits".
IBID., vol. 14, No. 5, Oct. 1971, pp. 1647- 1650.
Naimann et al., "High-Value Resistance - - - Circuits".
IBID., vol. 13, No. 1, July 1970, pp. 479-480.
Jacobus et al., "Complementary Transistors".
IBID., vol., 14, No. 4, Sept. 1971, p. 1045.

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