Method of manufacturing an insulated gate type field effect semi

Details Method of manufacturing an insulated gate type field effect semi Method of manufacturing an insulated gate type field effect semi

1976-09-08

1977-08-02

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 23, H01L 2122

Patent

active

040393585

ABSTRACT:
A method of manufacturing an insulated gate type field effect semiconductor device, wherein before an oxide film for the gate is formed, the surface portion of the silicon substrate is removed which includes defect such as scar, crack, distortion, dislocation or the like which tends to cause pin-holes to be formed in said oxide film.

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patent: 3725151 (1973-04-01), Zoroglu
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3761327 (1973-09-01), Harlow et al.
patent: 3893152 (1975-07-01), Lin
patent: 3926715 (1975-12-01), Sussmann
patent: 3986903 (1976-10-01), Watrous
Trans. of the Met. Soc. of A.I.M.E., vol. 233, Mar. 1965, pp. 596-602.

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