Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-08-12
1983-10-11
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 29591, 29576B, 357 20, 357 23D, H01L 21265, H01L 2128
Patent
active
044083840
ABSTRACT:
An insulated-gate field-effect transistor is disclosed which is particularly suitable for forming high-frequency transistors for a common source circuit configuration. The field-effect transistor is obtained in a simple and reliable manner using the following steps: (a) forming on an insulating layer a gate layer having separate, parallel apertures; (b) doping said epitaxial layer via said apertures so as to form parallel islands from which at least a portion of the source fingers is to be provided; (c) providing an etch-resistant mask having smaller parallel apertures each of which overlies an area of an island; (d) etching away said areas and underlying parts of the epitaxial layer so as to form parallel V-shaped grooves which expose the substrate, extend longitudinally along the islands and are adjoined along opposite sides by remaining parts of said islands, and (e) providing within the apertures of the gate layer and over the walls of the grooves parallel metal fingers which extend longitudinally along said islands to short-circuit the remaining parts of said islands to the epitaxial layer and to the substrate. These remaining parts form source fingers of the transistor. At least part of the drain fingers may also be formed in step (b).
REFERENCES:
patent: 3969745 (1976-07-01), Blocker
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4105475 (1978-08-01), Jenne
patent: 4175317 (1979-11-01), Aoki et al.
patent: 4181542 (1980-01-01), Yoshida et al.
patent: 4194283 (1980-03-01), Hoffmann
patent: 4198693 (1980-04-01), Kuo
patent: 4200968 (1980-05-01), Schroeder
patent: 4227297 (1980-10-01), Angerstein
patent: 4369564 (1983-01-01), Hiltpold
Morita et al., "Si UHF MOS High Power FET", IEEE Transactions on Electron Devices, Nov. 1974, pp. 733-734.
Lowis Royce
Tunbridge Peter M.
Biren Steven R.
Mayer Robert T.
Oisher Jack
Ozaki G.
U.S. Philips Corporation
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