Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-09-07
1985-10-08
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 148187, H01L 21263
Patent
active
045451109
ABSTRACT:
A method of manufacturing a field effect device is set forth where the source and drain zones have extensions of an accurately and reproducibly determined length adjoining the gate electrode. According to the present invention, an oxygen-preventing insulating layer is formed on a first silicon layer forming the gate electrode, and a second silicon layer is provided on the oxygen-preventing layer. A part of the second silicon layer is removed and the edges substantially coincide with the edges of the gate electrode to be formed. The edges of the remaining part of the second silicon layer are oxidized. Through successive maskless selective etching steps, the first silicon layer is exposed and etched away at the area of the oxidized etched portions. The extensions of the source and drain zones are implanted through the openings thus obtained.
REFERENCES:
patent: 4109371 (1978-08-01), Shibata et al.
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4306915 (1981-12-01), Shiba
patent: 4343657 (1982-08-01), Ito et al.
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4420872 (1983-12-01), de Zaldivar
Appels Johannes A.
Klaassen Francois M.
Maas Henricus G. R.
Miller Paul R.
Ozaki George T.
U.S. Philips Corporation
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