Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-03-04
1987-03-31
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 148187, 148188, H01L 21385, H01L 21425
Patent
active
046531734
ABSTRACT:
A method for fabricating insulated gate field effect transistors in NMOS or CMOS with source and drain regions having lightly doped extensions wherein the source and drain regions are made with a self-aligned process and a device made in accordance with such a method.
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Goto et al., IEEE, "A New Self-Aligned Source/Drain Diffusion Technology from Selectively Oxidized Poly-Silicon", 1979, pp. 585-588.
Mayer Robert T.
Ozaki George T.
Signetics Corporation
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