Method of manufacturing an insulated gate bipolar transistor

Details Method of manufacturing an insulated gate bipolar transistor Method of manufacturing an insulated gate bipolar transistor

1992-04-01

1994-03-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 41, 437 18, H01L 21265

Patent

active

052926729

ABSTRACT:
In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.

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Comparison Of Neutron And Electron Irradiation For Controlling IGT Switching Speed, IEEE Transaction on Electron Devices, Sep. 1985, vol. ED-32, No. 9, pp. 1629-1632.
Proton Implantation For Silicon Power Devices, Proceedings of 1988 International Symposium on Power Semiconductor Devices, Tokyo, pp. 147-152.

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