Method of manufacturing an infrared-sensitive charge coupled dev

Details Method of manufacturing an infrared-sensitive charge coupled dev Method of manufacturing an infrared-sensitive charge coupled dev

1987-02-27

1988-06-07

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 24, 437 53, 437130, 437133, 357 30, H01L 21208

Patent

active

047496592

ABSTRACT:
A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate serving as input for the radiation and as a rear surface of the device. The front surface of the device supports a plurality of control electrodes and at least one output electrode.
The window layer and the storage layer of the CCD are made of a binary compound AB. The sensitive layer is made of an n-ary compound (A,X,Y . . . ).sub.III (B,M,N . . . ).sub.V having a larger forbidden energy band and a smaller absorption limit wavelength than the window and storage layers.
The three layers of the device are formed by epitaxial growth on a substrate. The substrate is a layer of the binary compound AB coated with an epitaxial layer of the n-ary compound. The epitaxial substrate layer is a chemical blocking layer. The substrate and the chemical blocking layer are subsequently removed chemically.

REFERENCES:
patent: 4257057 (1981-03-01), Cheung et al.
patent: 4273596 (1981-06-01), Gutierrez et al.
Casey, H. C., Jr. et al. Heterostructure Lasers, pp. 15-17, 38-41, Acadamic Press, New York, (1978).
Liu, Y. Z. et al. "Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb Charge-Coupled Device," Applied Physics Letters, vol. 36, No. 6, pp. 458-461 (Mar. 15, 1980).
Quillec, M., et al. "High Mobility in Liquid Phase Epitaxial InGaAsP Free of Composition Modulations," Applied Physics Letters, vol. 42, No. 10, pp. 886-887 (May 15, 1983).

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