Method of manufacturing an image sensing micromodule

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S680000, C257SE21499, C257SE23180, C257SE31110, C438S064000

Reexamination Certificate

active

07956431

ABSTRACT:
A method of manufacturing a micromodule including the steps of: producing an integrated circuit on an active face of a chip made of a semi-conductive material, making a via passing through the chip, electrically linked to the integrated circuit, and inserting the chip into a box comprising a cavity and an electrically conductive element, the active face of the chip being disposed towards the bottom of the cavity, forming on at least one part of a lateral face of the chip a conductive lateral layer made of an electrically conductive material, electrically linked to a conductive element of the rear face of the chip, and producing a connection between the conductive lateral layer and the conductive element by depositing an electrically conductive material in the cavity.

REFERENCES:
patent: 2006/0035415 (2006-02-01), Wood et al.
patent: 2007/0126081 (2007-06-01), Webster et al.
patent: 2008/0252771 (2008-10-01), Wu
patent: 1 523 043 (2005-04-01), None
patent: 1 662 564 (2006-05-01), None

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