Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-02-06
2007-02-06
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S059000, C438S022000, C257SE31093, C257SE31094
Reexamination Certificate
active
11168423
ABSTRACT:
An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
REFERENCES:
patent: 4224520 (1980-09-01), Greene et al.
patent: 5554849 (1996-09-01), Gates
patent: 5572060 (1996-11-01), Butler et al.
patent: 5698852 (1997-12-01), Tanaka et al.
patent: 5858902 (1999-01-01), Ishikawa et al.
patent: 5965886 (1999-10-01), Sauer et al.
patent: 6031231 (2000-02-01), Kimata et al.
patent: 6188069 (2001-02-01), Endoh
patent: 6274869 (2001-08-01), Butler
patent: 6441413 (2002-08-01), Endoh
patent: 6635495 (2003-10-01), Hashimoto et al.
patent: 6717147 (2004-04-01), Oda
patent: 6759657 (2004-07-01), Iida et al.
patent: 07-146187 (1995-06-01), None
patent: 09-268061 (1997-10-01), None
patent: 2000-055737 (2000-02-01), None
patent: 2000-097765 (2000-04-01), None
patent: 2000-111397 (2000-04-01), None
Alexander et al, “Destruction of the Mott Insulating Ground State of Ca2RuO4 by a Structural Transition”, Physical Review B. vol. 60, No. 12, Sep. 15, 1999-II, pp. R8422-R8425.
Torrance et al “Systematic Study of Insulator-Metal Transitions in Perovskites RNiO3 (R=Pr, Nd, Sm, Eu) due to Closing of Charge-Transfer Gap”, Physical Review B. vol. 45, No. 14, Apr. 1, 1992-II, pp. 8209-8212.
U.S. Appl. No. 11/168,423, filed Jun. 29, 2005, Ikegawa et al.
J. B. Torrance et al., “Systematic Study of Insulator-Metal Transitions in Perovskites, RNiO3(R=Pr, Nd, Sm, Eu) Due to Closing of Charge-Transfer Gap”, Physical Review B, vol. 45, No. 14, Apr. 1, 1992-II, pp. 8209-8212.
C. S. Alexander et al., “Destruction of the Mott Insulating Ground State of Ca2RuO4by a Structural Transition”, Physical Review B, vol. 60, No. 12, Sep. 15, 1999-II, pp. R8422-R8425.
G. Cao et al., “Ground-State Instability of the Mott Insulator Ca2RuO4: Impact of Slight La Doping on the Metal-Insulator Transition and Magnetic Ordering”, Physical Review B, Condensed Matter and Materials Physics, Third Series, vol. 61, No. 8, Feb. 15, 2000-II, pp. R5053-5057.
G. Catalan et al., “Transport Properties of NdNiO3Thin Films Made by Pulsed-Laser Deposition”, Journal of Applied Physics, vol. 87, No. 1, Jan. 1, 2000, pp. 606-608.
M. A. Novojilov et al., “Perovskite Rare-Earth Nickelates in the Thin-Film Epitaxial State”, Applied Physics Letters, vol. 76, No. 15, Apr. 10, 2000, pp. 2041-2043.
R. A. McKee et al., “Crystalline Oxides on Silicon: the First Five Monolayers”, Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998, pp. 3014-3017.
I. Mizushima et al., “Empty-Space-in-Silicon Technique for Fabricating a Silicon-on-Nothing Structure”, Applied Physics Letters, vol. 77, No. 20, Nov. 13, 2000, pp. 3290-3292.
Funaki Hideyuki
Iida Yoshinori
Ikegawa Sumio
Nakayama Kohei
Shigenaka Keitaro
Estrada Michelle
Jefferson Quovaunda
Kabushiki Kaisha Toshiba
LandOfFree
Method of manufacturing an image device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an image device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an image device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3852480