Method of manufacturing an heteroepitaxial semiconductor structu

Details Method of manufacturing an heteroepitaxial semiconductor structu Method of manufacturing an heteroepitaxial semiconductor structu

1991-12-31

1993-12-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437126, 437132, 437133, 437107, 148DIG65, H01L 2120, H01L 3110, H01L 3118

Patent

active

052721051

ABSTRACT:
Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.

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