Method of manufacturing an emitter base self alignment structure

Fishing – trapping – and vermin destroying

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437 55, 437 36, 148DIG10, H01L 21265

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active

053765630

ABSTRACT:
Using a silicon etched technique to remove an implanted base and emitter surrounding emitter-base islands, a "mesa" emitter structure can be formed. Using the structure, a self aligned P+ can be formed around emitter-base islands.

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patent: 4980304 (1990-12-01), Chin et al.

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