Method of manufacturing an embedded type semiconductor laser

Details Method of manufacturing an embedded type semiconductor laser Method of manufacturing an embedded type semiconductor laser

1986-12-19

1989-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437130, 437156, H01L 738, H01L 21203

Patent

active

048106704

ABSTRACT:
In an embedded type semiconductor laser, at least three layers of a first conduction type clad layer, a quantum well active layer which contains a first or second conduction type or a pn junction, and a second conduction type clad layer, are grown successively on a first conduction type substrate. A high concentration impurity doped layer is provided excluding a predetermined striped region, situated adjacent to the active layer. An impurity diffusion is carried out by heat treatment which diffuses dopant from the high concentration impurity doped layer to the active layer.

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patent: 4716125 (1987-12-01), Makiuchi
"Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion" W. D. Laidig et al., Appl. Phys. Lett. 38(10), May 15, 1981, pp. 776-778.
"Stripe-Geometry AlGaAs-GaAs Quantum-Well Heterostructure Lasers Defined by Impurity-Induced Layer Disordering", K. Meehan et al., APL 44(7), Apr. 1, 1984, pp. 700 and 701.
Gavrilovic et al., "Si-Implanted and Disordered Stripe-Geometry Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers" Appl. Phys. Lett. 47(9), Nov. 1, 1985, pp. 903-905.
van Oirschot et al., "Ridged Substrate Internally Diffused Stripe . . . " Nov. 1, 1983, pp. 809-811, Applied Physics Letters.
K. Uomi et al., "High-Power Operation of Index-Guided Visible . . . " Oct. 15, 1984, pp. 818-820, Applied Physics Letters.
T. Hayakawa et al., "Temperature Dependence of Threshold Current . . . " Nov. 1981, pp. 2205-2210, IEEE Journal of Quantum Electronics.

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