Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2003-09-12
2008-05-06
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S162000, C438S166000, C257SE29273, C257SE29285
Reexamination Certificate
active
07368751
ABSTRACT:
A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10;20), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes (24;26,28) over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate (12) is not heated significantly making the method particularly useful for TFTs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.
REFERENCES:
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 5250444 (1993-10-01), Khan et al.
patent: 5288645 (1994-02-01), Toshima et al.
patent: 5328861 (1994-07-01), Miyakawa
patent: 5470763 (1995-11-01), Hamada
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5534445 (1996-07-01), Tran et al.
patent: 5681759 (1997-10-01), Zhang
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6709906 (2004-03-01), Yamaguchi et al.
patent: 6881615 (2005-04-01), Yamazaki et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1-Process Technology, Sunset Beach, CA: Lattice Press, 1986, pp. 191-194.
French Ian D.
McCulloch David J.
Yoon Soo Y.
Young Nigel D.
Birch & Stewart Kolasch & Birch, LLP
TPO Hong Kong Holding Limited
Wilczewski M.
LandOfFree
Method of manufacturing an electronic device comprising a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an electronic device comprising a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an electronic device comprising a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3984936