Method of manufacturing an electronic device

Details Method of manufacturing an electronic device Method of manufacturing an electronic device

2004-05-12

2009-10-20

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S709000, C438S710000, C430S310000, C430S316000

Reexamination Certificate

active

07605089

ABSTRACT:
A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.

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