Method of manufacturing an arsenic-including compound semiconduc

Details Method of manufacturing an arsenic-including compound semiconduc Method of manufacturing an arsenic-including compound semiconduc

1991-11-08

1993-03-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437934, H01L 21266

Patent

active

051963701

ABSTRACT:
This invention relates to a method of manufacturing an Arsenic-including compound semiconductor device comprising the steps of forming an ion implantation layer in a specified region of an As compound semiconductor wafer, forming an As layer on the surface of the wafer, and annealing the water. In this manner, As evaporation in the ion implantation layer by annealing heat may be prevented. Accordingly, sufficient substitution of the implanted ions and the ions other than As ions composing the As compound may be achieved, thereby preventing lowering of the electrical activation of the As compound semiconductor device. In addition, the electrical activation becomes uniform over the whole area of the water.

REFERENCES:
patent: 4472206 (1984-09-01), Hodgson et al.
patent: 4824798 (1989-04-01), Burnham et al.

Affiliated with

Also associated with

Rating

Method of manufacturing an arsenic-including compound semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing an arsenic-including compound semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an arsenic-including compound semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351397