Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-11-19
1996-06-04
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257751, 257764, 257770, H01L 2900
Patent
active
055236120
ABSTRACT:
A method of forming an antifuse in an integrated circuit having an insulating layer on a semiconductor substrate is provided. The method comprises forming a first metal interconnection layer on the insulating layer; forming a first barrier metal layer on the first metal interconnection layer; forming an amorphous silicon layer on the first barrier metal layer; forming another barrier metal layer atop the amorphous silicon layer; and forming a second metal interconnection layer on the second barrier metal layer. In at least one of the barrier metal forming steps, the barrier metal is formed by sputtering a barrier metal target which includes a semiconductor dopant, such as dopant.
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Carroll J.
Crosspoint Solutions Inc.
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