Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound
Patent
1990-06-29
1993-04-20
Silbaugh, Jan H.
Chemistry of inorganic compounds
Nitrogen or compound thereof
Binary compound
264344, B29B 1700, C01B 21072
Patent
active
052040801
ABSTRACT:
An aluminum nitride structure is prepared by placing an oxygen-trapping substance at at least one position on an aluminum nitride substrate having a first concentration of solution oxygen, and heating the resultant structure in a non-oxidizing atmosphere to locally reduce the first concentration of solution oxygen in said aluminum nitride substrate under said oxygen-trapping substance to a second concentration of solution oxygen by trapping the solution oxygen in the oxygen-trapping substance, thereby forming an aluminum nitride structure in which at least one region of the aluminum nitride structure corresponding to the position of said oxygen-trapping substance, which position has said second oxygen concentration, is integrally formed with aluminum nitride regions having said first concentration of solution oxygen. The aluminum nitride structure of the present invention exhibits anisotropic physical properties.
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patent: 4892703 (1990-01-01), Iio et al.
patent: 5006491 (1991-04-01), Ueda et al.
Toshiba Review 44[8]1989; A. Horiguchi et al; "Development of High-Thermal Conductivity Aluminum Nitride Ceramics", pp. 616-618.
Journal of Materials Science Letters 3(1984); N. Kuramoto et al; "Transparent AIN Ceramics", pp. 471-474.
Goto Yoshiko
Horiguchi Akihiro
Kasori Mitsuo
Ueno Fumio
Fiorilla Christopher A.
Kabushiki Kaisha Toshiba
Silbaugh Jan H.
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