Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1999-04-30
2000-08-08
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438462, H01L 2176
Patent
active
061001589
ABSTRACT:
A method of manufacturing an alignment mark. A substrate having a device region and an alignment mark region is provided. The device region is higher than the alignment mark region. The device region comprises an active region. An isolation structure is formed in the substrate at the edge of the alignment mark region and a first dielectric layer is formed over a portion of the substrate at the alignment mark region, simultaneously. A conductive layer is formed over the substrate. A portion of the conductive layer is removed to expose the first dielectric layer at the alignment mark region. The remaining conductive layer is patterned to form a component at the active region. A second dielectric layer with a smooth surface is formed over the substrate to cover the component. A wire is formed on the second dielectric layer, wherein a distance between the wire and the alignment mark region is larger than a distance between the component and the alignment mark region.
REFERENCES:
patent: 5786260 (1998-07-01), Jang et al.
patent: 5919714 (1999-07-01), Chen et al.
patent: 5958800 (1999-09-01), Yu et al.
patent: 5963816 (1999-10-01), Wang et al.
patent: 6015744 (2000-01-01), Tseng
patent: 6020249 (2000-02-01), Shih et al.
patent: 6043133 (2000-03-01), Jang et al.
Chern Horng-Nan
Hou Alex
Lee Tzung-Han
Lin Kun-Chi
Bowers Charles
Brewster William M.
United Microelectronics Corp.
LandOfFree
Method of manufacturing an alignment mark with an etched back di does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an alignment mark with an etched back di, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an alignment mark with an etched back di will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1149661