Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2006-01-30
2010-02-02
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S059000, C257S072000, C257S075000, C257SE29003, C257SE29105, C257SE29106, C257SE29108
Reexamination Certificate
active
07655950
ABSTRACT:
The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.
REFERENCES:
patent: 5858807 (1999-01-01), Kawamura
patent: 6081632 (2000-06-01), Yoshimura et al.
patent: 6160827 (2000-12-01), Tanaka
patent: 6191855 (2001-02-01), Maris
patent: 6296978 (2001-10-01), Takaya et al.
patent: 6402037 (2002-06-01), Prasad et al.
patent: 6403396 (2002-06-01), Gudesen et al.
patent: 6452710 (2002-09-01), Hiraga et al.
patent: 6456416 (2002-09-01), Ichimura et al.
patent: 6545248 (2003-04-01), Tanaka et al.
patent: 6713753 (2004-03-01), Rovira et al.
patent: 6756614 (2004-06-01), Hatano et al.
patent: 6803777 (2004-10-01), Pfaff et al.
patent: 6847050 (2005-01-01), Yamazaki et al.
patent: 6861614 (2005-03-01), Tanabe et al.
patent: 6870126 (2005-03-01), Jyumonji et al.
patent: 6-140323 (1992-10-01), None
patent: 2001-274088 (1996-05-01), None
patent: 09-260684 (1996-12-01), None
patent: 10-242073 (1997-02-01), None
patent: 2002-280302 (2001-03-01), None
patent: 2002-280323 (2001-03-01), None
Chang-ho Oh and Masakiyo Matsumura, “Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing”, Jpn. J. Appl. Phys., vol. 37 (1998) pp. 5474-5479.
Do-Hyun Choi, Kazuhiro Shimizu, Osamu Sugiura and Masakiyo Matsumura, “Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films”, Jpn. J. Appl. Phys., vol. 31 (1992) pp. 4545- 4549.
Koichi Murakami, Tetsuo Takahashi, Tadamasa Koyanagi, Koichiro Hoh, Yoshio Komiya and Yasuo Tarui, “Thermal Analysis and Experimental Evaluation of Melting Threshold Energy of Si Thin Film Structure in Laser Annealing” Japanese Journal of Applied Physics, vol. 21, No. 6, Jun. 1982, pp. 879-884.
Goto Jun
Ohkura Makoto
Saito Masakazu
Sato Takeshi
Takeda Kazuo
A. Marquez, Esq. Juan Carlos
Hitachi Displays Ltd.
Stites & Harbison PLLC
Warren Matthew E
LandOfFree
Method of manufacturing an active matrix substrate and an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an active matrix substrate and an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an active matrix substrate and an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4184904