Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1995-02-14
1996-01-02
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 1, 117 87, C30B 2962
Patent
active
054798736
ABSTRACT:
Aluminium borate whiskers by which a composite material having a higher strength than ever is available by definitely suppressing a generation of spinel along the surface of the whiskers are prepared by heating aluminium borate whiskers bearing a r-alumina surface layer in an atmosphere of ammonia gas or ammonia gas and a hydrocarbon gas such that a layer of a nitro-oxide and oxide of aluminium is generated along the surface of the whiskers.
REFERENCES:
patent: 3011870 (1961-12-01), Webb et al.
patent: 4985222 (1991-02-01), Hata et al.
Kotaka Hiroaki
Kurono Nobuhisa
Matsuo Shuitsu
Saito Hajime
Shintani Yoshitomo
Breneman R. Bruce
Garrett Felisa
Toshiba Ceramics Co. Ltd.
Toyota Jidosha & Kabushiki Kaisha
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