Method of manufacturing alignment mark and aligning method...

Details Method of manufacturing alignment mark and aligning method... Method of manufacturing alignment mark and aligning method...

2005-10-11

2005-10-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S462000, C438S975000, C257S797000

Reexamination Certificate

active

06953733

ABSTRACT:
A method of manufacturing an alignment mark structure and aligning a substrate includes providing a semiconductor substrate having an upper layer, the alignment mark structure being formed on a surface region of the upper layer. The method includes providing the surface region as having opposite first and second parallel sides extending along the upper layer, with outer side walls extending upwardly from the upper layer and extending lengthwise along the side. The outer side walls are provided lengthwise with alternating first and second wall portions, each of the first wall portions being spaced farther from the first side of the surface region than each of the second wall portions. An alignment pattern is defined by providing openings in the alignment mark structure.

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