Method of manufacturing active matrix substrate

Details Method of manufacturing active matrix substrate Method of manufacturing active matrix substrate

1995-12-21

1998-10-13

Trinh, Michael

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 438722, H01L 21786

Patent

active

058211330

ABSTRACT:
A simplified method of manufacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.

REFERENCES:
patent: 4933296 (1990-06-01), Parks et al.
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5075674 (1991-12-01), Katayama et al.
patent: 5102361 (1992-04-01), Katayama et al.
patent: 5166086 (1992-11-01), Takeda et al.
patent: 5231039 (1993-07-01), Sakono et al.

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