Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-01-04
2005-01-04
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000
Reexamination Certificate
active
06838358
ABSTRACT:
The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.
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Cayrefourcq Ian
Fournel Franck
Maurice Thibaut
Malsawma Lex H.
S.O.I.TEC Silicon on Insulator Technologies S.A.
Smith Matthew
Winston & Strawn LLP
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